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| e PTB 20204 1.0 Watt, 380-500 MHz RF Power Transistor Description The 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 1.0 Watt, 380-500 MHz Class A Characteristics -40 dB Max Two-Tone IMD at 1.0 W(PEP) Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 2.0 Output Power (Watts) 1.6 1.2 0.8 0.4 0.0 0.00 202 04 LO TC OD E VCE = 24 V ICQ = 340 mA f = 500 MHz 0.03 0.06 0.09 0.12 0.15 Input Power (Watts) Package 20227 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 60 60 4.0 0.5 11 0.0625 -40 to +150 16 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20204 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain Output Capacitance (100% Tested) e Conditions IB = 0 A, IC = 5 mA VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA VCB = 24 V, IE = 0 A, f = 1 MHz Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Cobo Min 25 70 4 20 -- Typ 30 -- 5 40 4.4 Max -- -- -- -- -- Units Volts Volts Volts -- pF RF Specifications (100% Tested) Characteristic Gain (VCE = 24 Vdc, Pout = 1.0 W, ICQ = 340 mA, f = 500 MHz) Two-Tone Intermodulation Distortion (VCE = 24 Vdc, Pout = 1.0 W(PEP), ICQ = 340 mA, f1 = 500 MHz, f2 = 501 MHz) Load Mismatch Tolerance (VCE = 24 Vdc, Pout = 2 W, ICQ = 340 mA, f = 500 MHz--all phase angles at frequency of test) Symbol Gpe IM2 Min 12.5 -- Typ 13.5 -44 Max -- -40 Units dB dB -- -- 30:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCE = 24 Vdc, Pout = 1.0 W, ICQ = 340 mA) Z Source Z Load Frequency MHz 400 450 500 R 6.0 3.9 3.4 Z Source jX -4.0 -0.6 2.1 R 33.2 34.0 30.1 Z Load jX 24.9 17.3 12.2 Z0 = 50 2 5/14/98 e Typical Performance Intermodulation Distortion vs. Power Output -35 PTB 20204 Two-Tone IMD (dBc) -40 -45 VCE = 24 V -50 -55 -60 0.00 ICQ = 340 mA f1 = 500 MHz f2 = 501 MHz 0.25 0.50 0.75 1.00 1.25 1.50 Output Power (Watts-PEP) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1997 Ericsson Inc. EUS/KR 1301-PTB 20204 Uen Rev. B 09-28-98 3 |
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